Polarization Sensitive Solar‐Blind Ultraviolet Photodetectors Based on Ultrawide Bandgap KNb ₃ O ₈ Nanobelt with Fringe‐Like Atomic Lattice (Adv. Funct. Mater. 24/2022)

High-Sensitive Ultraviolet Photodetectors Based on ZnO Nanorods/CdS Heterostructures

The ultraviolet (UV) photodetectors with ZnO nanorods (NRs)/CdS thin film heterostructures on glass substrates have been fabricated and characterized. It can be seen that the UV photoresponsivity of such a device became higher as the ZnO NR length was increased in the investigation. With an incident wavelength of 350 nm and 5 V applied bias, the responsivity of photodetectors based on ZnO NR/Cd...

ZnO-Based Ultraviolet Photodetectors

Ultraviolet (UV) photodetection has drawn a great deal of attention in recent years due to a wide range of civil and military applications. Because of its wide band gap, low cost, strong radiation hardness and high chemical stability, ZnO are regarded as one of the most promising candidates for UV photodetectors. Additionally, doping in ZnO with Mg elements can adjust the bandgap largely and ma...

Materials and Wireless Microfluidic Systems for Electronics Capable of Chemical Dissolution on Demand (Adv. Funct. Mater. 92015)

Ultrahigh quantum efficiency of CuO nanoparticle decorated In2Ge2O7 nanobelt deep-ultraviolet photodetectors.

Although there has been significant progress in the fabrication and performance optimization of 1-D nanostructure-based deep-ultraviolet photodetectors, it is still a challenge to develop an effective device with high performance characteristics, such as high photocurrent-dark current ratio and high quantum efficiency. Herein, an efficient and simple method to fabricate high performance CuO nan...

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Ultrawide-bandgap (UWBG) semiconductors, with bandgaps significantly wider than the 3.4 eV of GaN, represent an exciting and challenging new area of research in semiconductor materials, physics, devices and applications. Because many figures-ofmerit for device performance scale nonlinearly with bandgap, these semiconductors have long been known to have potential compelling advantages over their...